Micron Powers AI Growth with HBM3E Memory

Micron’s HBM3E Memory Accelerates AI Development

Global memory and storage leader Micron Technology has begun mass manufacture of High Bandwidth Memory 3E (HBM3E) devices. NVIDIA H200 Tensor Core GPUs, scheduled in Q2 2024, will use Micron’s 24GB 8H HBM3E Memory. Due to the HBM3E’s industry-leading performance and energy efficiency, Micron can dominate this market and provide AI solutions.

Micron HBM3E Memory uses 30% less power than rival HBM3E Memory chips, lowering data center running expenses.

HBM3E: Progressing the AI Revolution

Since the need for AI keeps growing, memory solutions become more and more important. Micron’s HBM3E Memory solution tackles this issue head-on by providing:

Outstanding Performance: AI accelerators, supercomputers, and data centers can access data at lightning-fast rates thanks to Micron’s HBM3E Memory , which reaches pin speeds of over 9.2 gigabits per second (Gb/s) and delivers over 1.2 terabytes per second (TB/s) of memory capacity.

Excellent Efficiency: Micron’s HBM3E Memory outperforms rival models in the market thanks to a 30% reduction in power consumption. In response to the increasing demand and use of AI, HBM3E Memory offers the most throughput at the lowest power consumption to improve crucial data center operational expense parameters.

Seamless Scalability: Data centers can easily expand their AI applications thanks to Micron’s HBM3E, which currently offers a capacity of 24 GB. Micron’s method provides the necessary memory capacity to expedite large-scale neural network training as well as inferencing tasks.

“Micron is accomplishing the triple threat through the HBM3E Memory milestone: speed to market management, best-in-class industry performance, and differentiated power efficiency,” said Micron Technology senior vice president and CBO Sumit Sadana. “Micron’s industry-leading HBM3E and HBM4 roadmap and memory bandwidth and capacity are excellent for AI applications, enabling significant growth in AI. with its comprehensive range of DRAM and NAND solutions for AI applications.”

Micron developed this industry-leading HBM3E architecture with its 1-beta technology, enhanced through-silicon via (TSV), and other innovations that enable a unique packaging solution. Micron is happy to support the advancement of semiconductor and system innovations going forward by joining TSMC’s 3DFabric Alliance. In the memory industry, Micron is credited with being a pioneer in 2.5D/3D stacking and cutting-edge packaging technology.

Furthermore, Micron is showcasing its leadership with the release of the 36GB 12-High HBM3E Memory sample, which is expected to surpass rival solutions in terms of energy efficiency and performance and generate over 1.2 TB/s by March 2024. As a sponsor of the global AI conference NVIDIA GTC, which begins on March 18, Micron will provide further details on its industry-leading AI memory portfolio and roadmaps.

With reference to Micron Technology

They are changing how the world uses information to enhance quality of life by setting the standard for cutting-edge memory and storage technologies. Micron and Crucial sell high-performance DRAM, NAND, and NOR memory and storage. The firm provides customers with cutting-edge technology, top-notch operations and production, and meticulous service. The data economy is propelled by human-generated breakthroughs that enable the development of 5G and AI applications. These innovations provide new opportunities for the client, mobile user experience, data center, and intelligent edge.

FAQS

What is HBM3E?

High-bandwidth memory 3E is HBM3E. Micron Technology’s new memory solution outperforms prior generations in performance and energy efficiency.

What makes HBM3E crucial for AI?

Large data sets and quick processing rates are often needed for AI applications. The quicker data flow between the CPU and memory made possible by HBM3E’s higher bandwidth may greatly enhance the performance of AI models. Its decreased power usage may also minimize operating expenses for data centers that handle AI applications.

Which characteristics make up the HBM3E from Micron?

Leading-edge results in the industry: provides more than 1.2 terabytes (TB/s) of memory bandwidth per second.
Outstanding efficiency: 30% less electricity is used compared with competitive systems.
Scalability: Currently available with a 24GB capacity, more capacities are planned for the future.